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CTLSH1-40M832D - SURFACE MOUNT DUAL HIGH CURRENT LOW VF SILICON SCHOTTKY DIODES

Description

Semiconductor Corp.

The CENTRAL SEMICONDUCTOR CTLSH1-40M832D Dual, Isolated, Low VF Schottky diodes are designed for applications where small size and operational effciency are the prime requirements.

Features

  • Dual Chip Device.
  • High Current (IF=1.0A).
  • Low Forward Voltage Drop (VF=0.55V MAX @ 1.0A).
  • High Thermal Efficiency.
  • Small TLM 3x2mm case TLM832D CASE.

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Full PDF Text Transcription

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CTLSH1-40M832D SURFACE MOUNT DUAL, HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODES Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CTLSH1-40M832D Dual, Isolated, Low VF Schottky diodes are designed for applications where small size and operational effciency are the prime requirements. With a maximum power dissipation of 1.65W, and a very small package footprint (approximately equal to the SOT-23), this leadless package design is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. Top View Bottom View FEATURES: • Dual Chip Device • High Current (IF=1.0A) • Low Forward Voltage Drop (VF=0.55V MAX @ 1.
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