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PROCESS
CPD73
Bridge Rectifier
Monolithic Quad Diode Bridge Chip
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PROCESS DETAILS Die Size Die Thickness Bonding Pad Area 1 (+DC) Bonding Pad Area 2 (AC) Bonding Pad Area 3 (-DC) Bonding Pad Area 4 (AC) Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 3 INCH WAFER 10,000 PRINCIPAL DEVICE TYPES CMFBR-6F 25 x 25 MILS 6.0 MILS 3.0 x 3.0 MILS 3.0 x 7.0 MILS 3.0 x 4.0 MILS 3.0 x 7.0 MILS Al - 12,000Å Au - 5,000Å
R2 (22-March 2010)
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PROCESS
CPD73
Typical Electrical Characteristics
R2 (22-March 2010)
w w w. c e n t r a l s e m i .