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CPD41 - Switching Diode High Current Switching Diode

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PROCESS CPD41 Switching Diode High Current Switching Diode Chip www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 19.7 x 19.7 MILS 8.0 MILS 6.5 x 6.5 MILS Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 30,394 PRINCIPAL DEVICE TYPES 1N3600 1N4150 CMPD4150 R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD41 Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i .
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