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CP317V - Small Signal Transistor

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PROCESS CP317V Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY EPITAXIAL PLANAR 14.5 x 14.5 MILS 7.1 MILS 2.4 x 2.2 MILS 2.4 x 2.2 MILS Al - 30,000Å Au - 18,000Å GROSS DIE PER 4 INCH WAFER 53,788 PRINCIPAL DEVICE TYPES CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 w w w. c e n t r a l s e m i . c o m R0 (30-August 2011) PROCESS CP317V Typical Electrical Characteristics w w w. c e n t r a l s e m i .
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