Datasheet4U Logo Datasheet4U.com

CMUDM8001 - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Description

The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers Low rDS(on) and Low Theshold Voltage.

Features

  • Power Dissipation 250mW Low rDS(on) Low Threshold Voltage Logic Level Compatible Small, SOT-523 Surface Mount Package Complementary Device: CMUDM7001 UNITS V V mA mA mW °C SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CMUD2836 ULTRAmini. SURFACE MOUNT DUAL HIGH SPEED SWITCHING SILICON DIODE Central Semiconductor Corp
CMUD2838 ULTRAmini. SURFACE MOUNT DUAL HIGH SPEED SWITCHING SILICON DIODE Central Semiconductor Corp
CMUD4448 ULTRAmini. HIGH SPEED SWITCHING DIODE Central Semiconductor Corp
CMUD7000 ULTRAmini. SURFACE MOUNT DUAL SERIES HIGH SPEED SWITCHING SILICON DIODE Central Semiconductor Corp
CMU04N03 N-Ch 30V Fast Switching MOSFETs Cmos

Other Datasheets by Central Semiconductor

Part Number Description
CMUDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CMUDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CMUDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CMUDM7005 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CMUD6263AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES

Full PDF Text Transcription

Click to expand full text
CMUDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.
Published: |