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CMRDM3575 - SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS

Description

The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications.

These MOSFETs offer low rDS(ON) and low threshold voltage.

Device is Hal

Features

  • Power dissipation: 125mW.
  • Low package profile: 0.5mm (MAX).
  • Low rDS(ON).
  • Low threshold voltage.
  • Logic level compatible.
  • Small SOT-963 surface mount package.

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Datasheet Details

Part number CMRDM3575
Manufacturer Central Semiconductor
File Size 498.02 KB
Description SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS
Datasheet download datasheet CMRDM3575 Datasheet

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CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer low rDS(ON) and low threshold voltage. MARKING CODE: CT SOT-963 CASE • Device is Halogen Free by design APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable devices FEATURES: • Power dissipation: 125mW • Low package profile: 0.
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