CMPD2836E
DESCRIPTION
: The CENTRAL SEMICONDUCTOR CMPD2836E and CMPD2838E are Enhanced versions of the CMPD2836 and CMPD2838 High Speed Switching Diodes. These devices are manufactured by the epitaxial planar process, in an epoxy molded surface mount SOT-23 package, designed for high speed switching applications. FEATURED ENHANCED SPECIFICATIONS:
- BVR from 75V min to 120V min.
SOT-23 CASE
- VF from 1.2V max to 1.0V max.
The following configurations are available: CMPD2836E DUAL, MON ANODE CMPD2838E DUAL, MON CATHODE
MARKING CODE: CA2E MARKING CODE: CA6E
UNITS V m A m A m W °C °C/W
- Peak Repetitive Reverse Voltage
Average Forward Current Peak Forward Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
MAXIMUM RATINGS: (TA=25 °C)
SYMBOL VRRM IO IFM PD TJ, Tstg ΘJA
120 200 300 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX
- IR VR=80V 100
- BVR IR=100µA 120 150
- VF...
