2N2218A
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N2218A TO-5 is a silicon NPN transistor manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications.
MARKING CODE: 2N2218A
TO-5 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=60V
ICEV
VCE=60V, VEB=3.0V
IEBO
VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=10m A
BVEBO
IE=10μA
VCE(SAT) IC=150m A, IB=15m A
VCE(SAT) IC=500m A, IB=50m A
VBE(SAT) IC=150m A, IB=15m A
VBE(SAT) IC=500m A, IB=50m A h FE VCE=10V, IC=100μA h FE VCE=10V, IC=1.0m A h FE VCE=10V, IC=10m A h FE VCE=10V, IC=150m A h FE VCE=1.0V, IC=150m...
