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SD200 - (SD200 - SD203) High-Speed Analog N-Channel Enhancement-Mode DMOS FETS

General Description

The SD200 series is manufactured utilizing Calogic’s proprietary DMOS design and processing techniques.

The device is designed to operate well through 1 GHz while maintaining excellent frequency response, power gain, and low noise.

Key Features

  • High gain.
  • . 8.0 dB min @ 1 GHz.
  • Low Noise.
  • . 5.0 dB max @ 1 GHz (SD202, SD203, SSTSD203) Low Interelectrode Capacitances.

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Datasheet Details

Part number SD200
Manufacturer Calogic
File Size 32.21 KB
Description (SD200 - SD203) High-Speed Analog N-Channel Enhancement-Mode DMOS FETS
Datasheet download datasheet SD200 Datasheet

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Other Datasheets by Calogic

Part Number Description
SD201 (SD200 - SD203) High-Speed Analog N-Channel Enhancement-Mode DMOS FETS
SD202 (SD200 - SD203) High-Speed Analog N-Channel Enhancement-Mode DMOS FETS
SD203 (SD200 - SD203) High-Speed Analog N-Channel Enhancement-Mode DMOS FETS
SD210 (SD210 - SD214) High-Speed Analog N-Channel DMOS FETs
SD211 (SD211/3/5) High-Speed Analo N-Channel DMOS FETs
SD212 (SD210 - SD214) High-Speed Analog N-Channel DMOS FETs
SD213 (SD211/3/5) High-Speed Analo N-Channel DMOS FETs
SD214 (SD210 - SD214) High-Speed Analog N-Channel DMOS FETs
SD215 (SD211/3/5) High-Speed Analo N-Channel DMOS FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CORPORATION High-Speed Analog N-Channel Enhancement-Mode DMOS FETS SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203 FEATURES • High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz • Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz (SD202, SD203, SSTSD203) Low Interelectrode Capacitances DESCRIPTION The SD200 series is manufactured utilizing Calogic’s proprietary DMOS design and processing techniques. The device is designed to operate well through 1 GHz while maintaining excellent frequency response, power gain, and low noise. The DMOS structure is an inherently low capacitance and very high speed design resulting in a device that bridges JFETS and GaAs products in performance characteristics.