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BTD7520J3 - High Voltage NPN Epitaxial Planar Transistor

Features

  • High BVCEO.
  • Very high current gain.
  • Pb-free package Symbol BTD7520J3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature VC.

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Datasheet Details

Part number BTD7520J3
Manufacturer CYStech
File Size 230.62 KB
Description High Voltage NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD7520J3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTD7520J3 Spec. No. : C614J3 Issued Date : 2008.07.11 Revised Date : Page No. : 1/6 Features • High BVCEO • Very high current gain • Pb-free package Symbol BTD7520J3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size.
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