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BTD1858I3 - Silicon NPN Epitaxial Planar Transistor

General Description

High BVCEO High current capability Pb-free lead plating package Symbol BTD1858I3 Outline TO-251AB TO-251S B：Base C：Collector E：Emitter B CE BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Colle

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Datasheet Details

Part number BTD1858I3
Manufacturer CYStech
File Size 319.69 KB
Description Silicon NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1858I3 Datasheet

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1858I3 Spec. No. : C856I3 Issued Date : 2006.06.21 Revised Date : 2017.05.17 Page No. : 1/7 Description • High BVCEO • High current capability • Pb-free lead plating package Symbol BTD1858I3 Outline TO-251AB TO-251S B：Base C：Collector E：Emitter B CE BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse , Pw≦380μs,Duty≦2%. BTD1858I3 Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 180 160 5 1.