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BTA1797M3 - PNP Transistor

Description

Low saturation voltage, VCE(SAT) = -0.2V(max.) at IC/IB=-1A/-50mA.

High current capability.

Excellent DC current gain characteristics.

Pb-free lead plating and halogen-free package.

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Datasheet Details

Part number BTA1797M3
Manufacturer CYStech
File Size 365.46 KB
Description PNP Transistor
Datasheet download datasheet BTA1797M3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2018.12.17 Page No. : 1/8 Silicon PNP Epitaxial Planar Transistor BTA1797M3 BVCEO IC VCESAT(Max) -50V -3A -0.2V Description  Low saturation voltage, VCE(SAT) = -0.2V(max.) at IC/IB=-1A/-50mA.  High current capability.  Excellent DC current gain characteristics.  Pb-free lead plating and halogen-free package.
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