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MTC3588G6 - P- & N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low gate charge.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTC3588G6 Outline TSOP-6 D2 S1 D1 G：Gate S：Source D：Drain G2 S2 G1 Ordering Information Device Package MTC3588G6-0-T1-G TSOP-6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gr.

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Datasheet Details

Part number MTC3588G6
Manufacturer CYStech Electronics
File Size 508.09 KB
Description P- & N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTC3588G6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C102G6 Issued Date : 2016.05.03 Revised Date : Page No. : 1/13 N- And P-Channel Enhancement Mode Power MOSFET MTC3588G6 BVDSS N-CH 14V ID @ TA=25 °C 5.4A(VGS=4.5V) 17.6mΩ(VGS=4.5V) RDSON(TYP.) 24.7mΩ(VGS=2.5V) 39.5mΩ(VGS=1.8V) 67.3mΩ(VGS=1.5V) P-CH -14V -3.6A(VGS=-4.5 V) 45.1mΩ(VGS=-4.5V) 65.6mΩ(VGS=-2.5V) 88.5mΩ(VGS=-1.8V) 154.3mΩ(VGS=-1.