MTB09P04DFP - P-Channel Enhancement Mode Power MOSFET

CYStech Electronics

Key Features

Single Drive Requirement.
Low On-resistance.
Fast switching Characteristic.
Pb-free lead plating package Symbol MTB09P04DFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device Package MTB09P04DFP-0-UB-S TO-220FP (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs.

MTB09P04DFP p-channel enhancement mode power mosfet by CYStech Electronics - Datasheet Preview

Datasheet Details

Part number	MTB09P04DFP
Manufacturer	CYStech Electronics
File Size	356.92 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTB09P04DFP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C877FP Issued Date : 2015.07.06 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTB09P04DFP BVDSS ID @ VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-15A -40V -56A 6.1mΩ(typ) 7.