Datasheet4U Logo Datasheet4U.com

MTB032P06V8 - P-Channel Enhancement Mode Power MOSFET

General Description

The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB032P06V8 Outline Pin 1 DFN3×3 G:Gate S:Source D:Drain Ordering Information Device MTB032P06V8-0-T1-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel MTB032P06V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C924V8 Issued Date : 2013.06.06 Revised D.

📥 Download Datasheet

Datasheet Details

Part number MTB032P06V8
Manufacturer CYStech Electronics
File Size 281.95 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB032P06V8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C924V8 Issued Date : 2013.06.06 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB032P06V8 BVDSS ID RDSON@VGS=10V, ID=-6A RDSON@VGS=-4.5V, ID=-4A -60V -25A 29mΩ(typ) 33mΩ(typ) Description The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.