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HQN2498QF - Quadruple High Voltage NPN Epitaxial Planar Transistor

Description

High breakdown voltage.

Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA.

Complementary to HQP1498QF Pb-free package Equivalent Circuit HQN2498QF Outline SOP-10 The following ratings and characteristics apply to each transisto

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Datasheet Details

Part number HQN2498QF
Manufacturer CYStech Electronics
File Size 315.79 KB
Description Quadruple High Voltage NPN Epitaxial Planar Transistor
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CYStech Electronics Corp. Quadruple High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor Spec. No. : C899QF Issued Date : 2009.11.09 Revised Date : 2009.12.23 Page No. : 1/6 HQN2498QF Description • High breakdown voltage. (BVCEO=400V) • Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA. • Complementary to HQP1498QF • Pb-free package Equivalent Circuit HQN2498QF Outline SOP-10 The following ratings and characteristics apply to each transistor in this device. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature HQN2498QF Preliminar Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 400 400 7 300 1.
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