CT8124-T52
Features
- Drain-Source Breakdown Voltage VDSS = 20V
- Drain-Source On-Resistance
RDS(ON) 23m, at VGS= 4.5V, ID= 5.0A RDS(ON) 27m, at VGS= 2.5V, ID= 3.5A RDS(ON) 34m, at VGS= 1.8V, ID= 2.8A
- Continuous Drain Current at TC=25℃ID = 9.0A
- Advanced high cell density Trench Technology
- Ro HS pliance & Halogen Free
Description
The CT8124
- T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications .
Applications
- Notebook
- High side switching
- Power Management
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 3 Aug, 2015
CT8124-T52 N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25o C
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25℃
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25℃
TSTG
Storage Temperature Range
TJ Operating...
