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CT2323-R3 - P-Channel MOSFET

Datasheet Summary

Description

The CT2323-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Features

  • Drain-Source Breakdown Voltage VDSS - 20 V.
  • Drain-Source On-Resistance RDS(ON) 30mΩ, at VGS= - 4.5V, IDS= - 4.7A RDS(ON) 35mΩ, at VGS= - 2.5V, IDS= - 4.1A RDS(ON) 40mΩ, at VGS= - 1.8V, IDS= - 2.0A ℃.
  • Continuous Drain Current at TA=25 ID = - 4.2A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet preview – CT2323-R3

Datasheet Details

Part number CT2323-R3
Manufacturer CT Micro
File Size 2.03 MB
Description P-Channel MOSFET
Datasheet download datasheet CT2323-R3 Datasheet
Additional preview pages of the CT2323-R3 datasheet.

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Full PDF Text Transcription

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CT2323-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance RDS(ON) 30mΩ, at VGS= - 4.5V, IDS= - 4.7A RDS(ON) 35mΩ, at VGS= - 2.5V, IDS= - 4.1A RDS(ON) 40mΩ, at VGS= - 1.8V, IDS= - 2.0A ℃• Continuous Drain Current at TA=25 ID = - 4.2A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Portable Equipment • Battery Powered System • DC/DC Converter Package Outline Description The CT2323-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
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