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HPD800R1K2PD-G - Silicon N-Channel Power MOSFET

Description

HPD800R1K2PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • Fast Switching.
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free.
  • Zener-Protected.

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Datasheet Details

Part number HPD800R1K2PD-G
Manufacturer CR Micro
File Size 833.06 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HPD800R1K2PD-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R HPD800R1K2PD-G General Description： HPD800R1K2PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-252, which accords with the RoHS standard. VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Eoss@400V 850 V 5 A 42 W 1.0 Ω 1.1 uJ Features：  Fast Switching  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test  Halogen Free  Zener-Protected Applications： Power switch circuit of adaptor and charger.
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