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Silicon N-Channel Power MOSFET
○R
HGQ09N06A
General Description：
HGQ09N06A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is PDFN5×6, which accords with the RoHS standard. Features：
Fast Switching
Low ON Resistance(Rdson≤9.8mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
HGQ09N06A Datasheet
