HGP065NE4A
Description
：
HGP065NE4A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the Ro HS standard.
Features
：
- Fast Switching
- Low ON Resistance(Rdson≤6.5mΩ)
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
E-cigarette,Electric Tool
Absolute（Tj= 25℃ unless otherwise specified）
Symbol Parameter
Rating
VDSS
ID IDMa1 VGS EAS a2
TJ，Tstg
Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage...
