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Silicon N-Channel Power MOSFET
○R
HGD065NE4A
General Description：
HGD065NE4A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard.
VDSS ID PD RDS(ON)Typ VGS=10V
45 V 60 A 39 W 5.2 mΩ
Features：
Fast Switching Low ON Resistance(Rdson≤6.5mΩ) Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
HGD065NE4A Datasheet
