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Silicon N-Channel Power MOSFET
○R
CS65N25 ANR
General Description：
VDSS
250
CS65N25 ANR, the silicon N-channel Enhanced ID
65
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
420
which reduce the conduction loss, improve switching
RDS(ON)Typ
42
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3P （N）, which accords with the RoHS standard..
Features：
Fast Switching Low ON Resistance(Rdson≤50mΩ) Low Gate Charge (Typical Data:90.1nC) Low Reverse transfer capacitances(Typical:44 pF) 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
CS65N25ANR Datasheet
