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Silicon N-Channel Power MOSFET CS21N06 A3
General Description：
VDSS
60
CS21N06 A3, the silicon N-channel Enhanced ID
21
VDMOSFETs, is obtained by the high density Trench PD
31
technology which reduce the conduction loss, improve switching
RDS(ON)Typ
33
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications.. The
package form is TO-251, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤45mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS21N06A3 Datasheet
