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Silicon N-Channel Power MOSFET
○R
CS20N90 ANR
General Description：
VDSS
900
CS20N90 ANR, the silicon N-channel Enhanced ID
20
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
250
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.28
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3P （N）, which accords with the RoHS standard..
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.40Ω) l Low Gate Charge (Typical Data: 140.5nC) l Low Reverse transfer capacitances(Typical: 18.3pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
CS20N90ANR Datasheet
