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Silicon N-Channel Power MOSFET CRTM045N03L2P
General Description：
CRTM045N03L2P the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS
30 V
ID（Silicon limited current）
85
A
ID（Package limited current）
60
A
PD
52 W
RDS(ON)Typ
3.4 mΩ
suitable for use as a load switch and PWM applications. The
package form is PDFN5*6, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤4.5mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications：
Power switch circuit of adaptor and charger.
CRTM045N03L2P Datasheet
