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CRTE200N06L2D-G - Trench N-MOSFET

Features

  • Uses CRM advanced Trench technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Qualified according to JEDEC criteria.

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Datasheet preview – CRTE200N06L2D-G

Datasheet Details

Part number CRTE200N06L2D-G
Manufacturer CR Micro
File Size 1.00 MB
Description Trench N-MOSFET
Datasheet download datasheet CRTE200N06L2D-G Datasheet
Additional preview pages of the CRTE200N06L2D-G datasheet.

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Full PDF Text Transcription

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Features • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Electrical tools • Lithium battery protection CRTE200N06L2D-G Trench N-MOSFET 60V, 16mΩ, 10A Product Summary VDS 60V RDS(on) typ. ID 16mΩ 10A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # CRTE200N06L2D-G Marking T200N06L2D Package SOP-8L Packing Reel Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TA = 25°C TA = 100°C Pulsed drain current (TA = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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