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Silicon N-Channel Power MOSFET
○R
CRTE110N03L2D-G
General Description：
CRTE110N03L2D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃)
RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOP8,
which accords with the RoHS standard.
Features：
30
V
10
A
2
W
9.8 mΩ
Fast Switching Low ON Resistance Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Halogen Free
Applications：
Power switch circuit of adaptor and charger.
CRTE110N03L2D-G Datasheet
