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Silicon N-Channel Power MOSFET CRTE10DN06LD-G
General Description：
CRTE10DN06LD-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOP-8L, which accords with the Halogen Free standard.
Features：
l Fast Switching l Low ON Resistance (Rdson≤100mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
Applications：
Power switch circuit of adaptor and charger.
VDSS ID PD(Ta=25℃) RDS(ON)
60
V
3.3
A
1.
CRTE10DN06LD-G Datasheet
