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CRTE045N03L - Trench N-MOSFET

Features

  • Uses CRM(CQ) advanced SkyMOS4 technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Qualified according to JEDEC criteria.

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Datasheet Details

Part number CRTE045N03L
Manufacturer CR Micro
File Size 1.42 MB
Description Trench N-MOSFET
Datasheet download datasheet CRTE045N03L Datasheet
Additional preview pages of the CRTE045N03L datasheet.

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Full PDF Text Transcription

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() CRTE045N03L Trench N-MOSFET 30V, 2.9mΩ, 30A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Synchronous Rectification for AC/DC Quick Charger • Battery management • UPS (Uninterrupible Power Supplies) Product Summary VDS 30V RDS(on)@10V typ 2.9mΩ ID 30A 100% Avalanche Tested 100% DVDS Tested Package Marking and Ordering Information Part # CRTE045N03L Marking 04503 Package SOP-8 Packing Reel Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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