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CRTD045P03L2-G - -30V -130A Trench P-MOSFET

Features

  • Uses CRM advanced Trench technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Qualified according to JEDEC criteria.

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Datasheet Details

Part number CRTD045P03L2-G
Manufacturer CR Micro
File Size 937.30 KB
Description -30V -130A Trench P-MOSFET
Datasheet download datasheet CRTD045P03L2-G Datasheet
Additional preview pages of the CRTD045P03L2-G datasheet.

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Full PDF Text Transcription

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Features • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Electrical tools • Lithium battery protection CRTD045P03L2-G Trench P-MOSFET -30V, 3.6mΩ, -130A Product Summary VDS -30V RDS(on) typ. ID 3.6mΩ -130A 100% DVDS Tested 100% Avalanche Tested Package Marking and Ordering Information Part # CRTD045P03L2-G Marking T045P03L2 Package TO-252 Packing Reel Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C （Silicon limited） TC = 25°C （Package limited）a1 TC = 100°C （Package limited）a1 Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.
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