CRTB360N06L-G Datasheet | CR Micro

Description ： VDSS CRTB360N06L-G, the silicon N-channel Enhanced ID VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 26 mΩ performance and enhance the avalanche energy. The transistor RDS(ON) Typ@Vgs=4.5V 31 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-223, which accords with the Halogen Free standard. Features ： l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： l Power switch circuit of adaptor and charger. l Synchronus Rectification in DC/DC Converters Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TA = 25 °C Continuous Drain Current TA = 100 °C Pulsed Drain...