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CRST037N10N - SkyMOS1 N-MOSFET

Key Features

  • Uses CRM(CQ) advanced SkyMOS1 technology.
  • Extremely low on-resistance RDS(on).
  • Excellent QgxRDS(on) product(FOM).
  • Qualified according to JEDEC criteria.

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Datasheet Details

Part number CRST037N10N
Manufacturer CR Micro
File Size 969.11 KB
Description SkyMOS1 N-MOSFET
Datasheet download datasheet CRST037N10N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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() CRST037N10N,CRSS035N10N SkyMOS1 N-MOSFET 100V, 3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies) Product Summary VDS 100V RDS(on) typ 3mΩ ID 120A 100% DVDS Tested 100% Avalanche Tested CRST037N10N CRSS035N10N Package Marking and Ordering Information Part # CRST037N10N CRSS035N10N Marking CRST037N10N CRSS035N10N Package TO-220 TO-263 Packing Tube Tape Reel Size N/A N/A Tape Width N/A N/A Qty 50pcs 1000pcs Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (