CRM10QM80F
Features
- Uses CRM(CQ) advanced Split Gate technology
Product Summary
- Extremely low on-resistance RDS(on)
- 3-Phase Full Bridge N-Channel MOSFET Module
- Electrically Isolated DBC Substrate for Low Thermal Resistance
VDS RDS(on) Typ.
100V 1.9mΩ
80A
Applications
- Motor drive
MDIP18
Top View Package Marking and Ordering Information
Bottom View
Part #
Marking
Package Packing Reel Size
Tape Width
CRM10QM80F CRM10QM80F
MDIP18
Tube
N/A
N/A
Qty 12pcs
⑩ ⑨⑧ ⑦ ⑥⑤ ④ ③② ①
Rev1.0
©China Resources Microelectronics (Chongqing) Limited
Page 1
华润微电子(重庆)有限公司
3-Phase Full Bridge N-Channel MOSFET Module
Absolute Maximum Ratings
Parameter
Drain-source voltage Continuous drain current TC = 25°C (Package Limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.5m H, VDS=80V) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Thermal Mechanical Characteristics Parameter Thermal...
