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CRG75T75AQF5SDZ - Silicon FS Trench IGBT

Description

Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances.

RoHS Compliant.

Features

  • FS Trench Technology, Positive temperature coefficient.
  • Low saturation voltage: VCE(sat),TYP=1.45V @IC=75A,VGE=15V;.
  • Low switching loss:.

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Datasheet Details

Part number CRG75T75AQF5SDZ
Manufacturer CR Micro
File Size 1.38 MB
Description Silicon FS Trench IGBT
Datasheet download datasheet CRG75T75AQF5SDZ Datasheet

Full PDF Text Transcription

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Silicon FS Trench IGBT CRG75T75AQF5SDZ General Description: Using micro trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. Features: ● FS Trench Technology, Positive temperature coefficient ● Low saturation voltage: VCE(sat),TYP=1.45V @IC=75A,VGE=15V; ● Low switching loss: Applications ● UPS ● Solar converts ● Charger VCES 750 V IC 75 A Ptot (TC=25℃) 468 W VCE(sat) 1.45 V TO-247-4 Package Parameters Type CRG75T75AQF5SDZ Package TO-247-4 Marking G75T75AQF5SDZ Packing Tube WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Published: |