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Silicon N-Channel Power MOSFET
CR10N65F A9K
General Description：
CR10N65F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
650
V
10
A
39
W
0.86
Ω
Applications：
Power switch circuit of adaptor and charger.
CR10N65FA9K Datasheet
