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M02N601D1 - Silicon N-Channel Power MOSFET

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CITC

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M02N601D1 Silicon N-Channel Power MOSFET by CITC - Datasheet Preview — Datasheet preview – M02N601D1

Datasheet Details

Part number	M02N601D1
Manufacturer	CITC
File Size	122.49 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	M02N601D1 Datasheet
Additional preview pages of the M02N601D1 datasheet.

Product details

Features

s.
600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V.
100% avalanche, EAS tested.
Suffix "G" indicates Halogen-free part, ex. M02N601D1G.
Outline TO-251 0.264(6.7) 0.248(6.3) 0.205(5.2) 0.189(4.8) 0.060(1.52) 0.058(1.48) 0.098(2.5) 0.083(2.1) 0.024(0.6) 0.016(0.4) 0.193(4.9) 0.181(4.6) 0.217(5.52) 0.216(5.48) 0.583(14.80) 0.559(14.20) 0.209(5.3) 0.193(4.9).
Mechanical data.
Epoxy:UL94-V0 rated flame retardant.
Case : JEDEC TO-251 molded p.

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Other Datasheets by CITC

M02N601D - Silicon N-Channel Power MOSFET

Published: Mar 13, 2018 |