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CEL68N60SF
N-Channel Enhancement Mode Field Effect Transistor With Fast Body Diode
FEATURES
650V@TJ max, 68A, RDS(ON) = 37mΩ @VGS = 10V Super high dense cell design for extremely low RDS(ON).
9 10 11 D
High power and current handing capability.
Pb-free lead plating ;RoHS compliant.
Halogen Free.
Fast reverse recovery time(Trr).
TOLL package.
Applications
PV Inverter.
1 2 3 4 5 6 7 8
EV Charging.
SMPS.
9 87 6
5 4 3 2 1
1G
10
Driver S
2
11
S
345678
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS
600
VGS
±30
Drain Current-Continuous@ TC = 25 C @ TC = 100 C
ID
68 43
Drain Current-Pulsed a
IDM
272
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
416 3.
CEL68N60SF Datasheet
