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CEH2609 - Dual Enhancement Mode Field Effect Transistor

Features

  • 20V, 3.5A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. -20V, -2.5A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 145mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. 4 5 6 3 2 1 TSOP-6 G1(1) D1(6) G2(3) S1(5) D2(4) S2(2).

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Datasheet Details

Part number CEH2609
Manufacturer CET
File Size 597.96 KB
Description Dual Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEH2609 Datasheet
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Full PDF Text Transcription

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CEH2609 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 20V, 3.5A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. -20V, -2.5A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 145mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. 4 5 6 3 2 1 TSOP-6 G1(1) D1(6) G2(3) S1(5) D2(4) S2(2) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 20 VGS ±12 ID 3.5 IDM 14 P-Channel -20 ±12 -2.5 10 Maximum Power Dissipation PD 1.
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