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CEH2608 - Dual MOSFET

Features

  • 20V, 3.8A, RDS(ON) = 50mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. 4 5 6 3 2 1 TSOP-6 G1(1) D1(6) G2(3) S1(5) D2(4) S2(2).

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Datasheet Details

Part number CEH2608
Manufacturer CET
File Size 424.77 KB
Description Dual MOSFET
Datasheet download datasheet CEH2608 Datasheet
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Full PDF Text Transcription

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CEH2608 Dual Enhancement Mode Field Effect Transistor (N Channel) PRELIMINARY FEATURES 20V, 3.8A, RDS(ON) = 50mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. 4 5 6 3 2 1 TSOP-6 G1(1) D1(6) G2(3) S1(5) D2(4) S2(2) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 20 VGS ±12 ID 3.8 IDM 15.2 Maximum Power Dissipation PD 1.
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