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CEB05P03 - P-Channel MOSFET

Features

  • -30V, -18A,RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

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Datasheet Details

Part number CEB05P03
Manufacturer CET
File Size 113.83 KB
Description P-Channel MOSFET
Datasheet download datasheet CEB05P03 Datasheet

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Full PDF Text Transcription

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CEP05P03/CEB05P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -18A,RDS(ON) = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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