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NE85619-T1-A - NPN SILICON EPITAXIAL TRANSISTOR

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CEL

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NE85619-T1-A NPN SILICON EPITAXIAL TRANSISTOR by CEL - Datasheet Preview — Datasheet preview – NE85619-T1-A

Datasheet Details

Part number	NE85619-T1-A
Manufacturer	CEL
File Size	4.33 MB
Description	NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	NE85619-T1-A Datasheet
Note	This datasheet PDF includes multiple part numbers: NE85619-T1-A, NE85619. Please refer to the document for exact specifications by model.
Additional preview pages of the NE85619-T1-A datasheet.

Product details

Description

fromVHF band to UHF band.

Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

Features

Low Voltage Use.
High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz).
Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
Ultra Super Mini Mold Package.

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Published: Mar 14, 2015 |