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SILICON TRANSISTOR
NE686 SERIES
DISCONTINUED
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN:
|S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz • LOW NOISE: 1.5 dB AT 2.0 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES
DESCRIPTION
The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillator applications. NE686's high fT make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is available in six different low cost plastic surface mount package styles.
NE68618 Datasheet
