• Part: LS4448
  • Description: HIGH SPEED SILICON SWITCHING DIODES
  • Category: Diode
  • Manufacturer: Continental Device India
  • Size: 329.61 KB
Download LS4448 Datasheet PDF
Continental Device India
LS4448
DESCRIPTION Repetitive Peak Reverse Voltage Continuous Reverse Voltage Peak Forward Surge Current tp=1µs Repetitive Peak Forward Current Forward Current Average Forward Current Power Dissipation up to Tj=25ºC Junction Temperature Storage Temperature Range SYMBOL VRRM VR IFSM IFRM IF IFAV PD Tj Tstg VALUE 100 75 2 500 300 150 500 175 - 65 to +175 THERMAL RESISTANCE Junction to Ambient - Rth (j-a) - Device mounted on a PC board 50mm x 50mm 1.6mm ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Forward Voltage IF=5m A IF=50m A LS4148 IF=100m A LS4448 Reverse Current IR VR=20V VR=20V, Tj=150ºC VR=75V Reverse Breakdown Voltage VBR IR=100µA, tp/T=0.01, tp=0.3ms 500 MIN 0.62 MAX 0.72 1.0 1.0 25 50 5.0 DYNAMIC CHARACTERISTICS Diode Capacitance Rectification Efficiency Reverse Recovery Time Cd VR=0V, f=1MHz, VHF=50m V ηr VHF=2V, f=100MHz 45 trr IF=10m A, to IR=60m A RL=100 Ω Measured @ IR=1m A 4.0...