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BZV55C33 - SILIICON PLANAR ZENER DIODES

Download the BZV55C33 datasheet PDF. This datasheet also covers the BZV55C3V6 variant, as both devices belong to the same siliicon planar zener diodes family and are provided as variant models within a single manufacturer datasheet.

Description

Average Forward Current (averaged Over any 20 ms period) Repetitive Peak Forward Current Total Power Dissipation up to Tflange=50ºC Up to Ta=50ºC and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Non-Repetitive Peak Reverse Power Dissipation t=100µs, Tj=150ºC Storage Temperature Junction Tem

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Note: The manufacturer provides a single datasheet file (BZV55C3V6-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BZV55C33
Manufacturer CDIL
File Size 291.12 KB
Description SILIICON PLANAR ZENER DIODES
Datasheet download datasheet BZV55C33 Datasheet

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Other Datasheets by CDIL

Part Number Description
BZV55C30 SILIICON PLANAR ZENER DIODES
BZV55C36 SILIICON PLANAR ZENER DIODES
BZV55C39 SILIICON PLANAR ZENER DIODES
BZV55C3V6 SILIICON PLANAR ZENER DIODES
BZV55C3V9 SILIICON PLANAR ZENER DIODES

Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR ZENER DIODES BZV55C 3V6 to 75V SOD - 80C Mini MELF (LL-34) Polarity : Cathode is indicated by a blue band Hermetically Sealed, Glass Silicon Diodes ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION Average Forward Current (averaged Over any 20 ms period) Repetitive Peak Forward Current Total Power Dissipation up to Tflange=50ºC Up to Ta=50ºC and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Non-Repetitive Peak Reverse Power Dissipation t=100µs, Tj=150ºC Storage Temperature Junction Temperature Thermal Resistance From Junction to tie-point (flanges) From Junction to Ambient when Mounted on a Ceramic Substrate of 10 mm x 10 mm x 0.
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