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BZT52C4V7 - SURFACE MOUNT SILICON ZENER DIODES

General Description

Forward Voltage Drop @ IF 10mA Power Dissipation @ 25ºC Peak Forward Surge Current, 8.3ms Single Half Sine-WaveSuperimposed on Rated Load SYMBOL VF PD IFSM VALUE 0.9 410 2.0 UNIT V mW A Operating Junction and Storage Temperature Range Tj - 55 to +150 °C Mounted on 5.0mm2

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Datasheet Details

Part number BZT52C4V7
Manufacturer CDIL
File Size 321.01 KB
Description SURFACE MOUNT SILICON ZENER DIODES
Datasheet download datasheet BZT52C4V7 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT SILICON ZENER DIODES BZT52C 4V7 to 39V SOD-123 PLASTIC PACKAGE Marking: As Indicated below with Cathode Band ABSOLUTE MAXIMUM RATINGS DESCRIPTION Forward Voltage Drop @ IF 10mA Power Dissipation @ 25ºC Peak Forward Surge Current, 8.3ms Single Half Sine-WaveSuperimposed on Rated Load SYMBOL VF *PD **IFSM VALUE 0.9 410 2.0 UNIT V mW A Operating Junction and Storage Temperature Range Tj - 55 to +150 °C * Mounted on 5.0mm2 ( 0.13mm thick) land areas ** Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) Zener Voltage Zener Impedance VF @ 10mA <0.