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BZT52C30S - SURFACE MOUNT SILICON ZENER DIODES

General Description

Maximum Forward Voltage Drop @ IF= 10mA Power Dissipation @ 25ºC Peak Forward Surge Current, 8.3ms Single Half Sine-WaveSuperimposed on Rated Load Operating Junction and Storage Temperature Range Mounted on 5.0mm2 ( 0.13mm thick) land areas Measured on 8.3ms, single half sine-wave

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Datasheet Details

Part number BZT52C30S
Manufacturer CDIL
File Size 204.60 KB
Description SURFACE MOUNT SILICON ZENER DIODES
Datasheet download datasheet BZT52C30S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT SILICON ZENER DIODES BZT52C 4V3S to 39S SOD-323 PLASTIC PACKAGE Marking: As Indicated below with Cathode Band SYMBOL VF *PD **IFSM Tj VALUE 0.9 200 2.0 - 55 to +150 UNIT V mW A °C ABSOLUTE MAXIMUM RATINGS DESCRIPTION Maximum Forward Voltage Drop @ IF= 10mA Power Dissipation @ 25ºC Peak Forward Surge Current, 8.3ms Single Half Sine-WaveSuperimposed on Rated Load Operating Junction and Storage Temperature Range * Mounted on 5.0mm2 ( 0.13mm thick) land areas ** Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) Zener Voltage Device # min 4.09 4.47 4.85 5.32 5.89 6.