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BD180 - EPITAXIAL SILICON POWER TRANSISTORS

Description

Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45

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Datasheet Details

Part number BD180
Manufacturer CDIL
File Size 90.50 KB
Description EPITAXIAL SILICON POWER TRANSISTORS
Datasheet download datasheet BD180 Datasheet
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD175 BD177 BD179 NPN BD176 BD178 BD180 PNP ECB Intended for use in Medium Power Linear Switching Applications TO126 Plastic Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45 BD177 BD178 60 60 5.0 3.0 7.0 1.
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