Datasheet4U Logo Datasheet4U.com

BCY58 - NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS

Description

SYMBOL BCY58 Collector -Emitter Voltage VCEO 32 Collector -Emitter Voltage(RBE=10 ohms) VCES 32 Emitter -Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25 degC PD Derate Above 25 deg C Power Dissipation@ Tc=25 degC PD Derate Above 25 deg C Operating And Sto

📥 Download Datasheet

Datasheet preview – BCY58

Datasheet Details

Part number BCY58
Manufacturer CDIL
File Size 91.81 KB
Description NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BCY58 Datasheet
Additional preview pages of the BCY58 datasheet.

📁 Similar Datasheet

  • BCY58 - NPN switching transistors (NXP)
  • BCY58 - LOW NOISE AUDIO AMPLIFIERS (STMicroelectronics)
  • BCY58 - npn silicon planar transistors (Siemens Semiconductor Group)
  • BCY58 - NPN SILICON PLANAR EPITAXIAL TRANSISTOR (Micro Electronics)
  • BCY58 - SILICON NPN TRANSISTORS (Central Semiconductor)
  • BCY58 - TRANSISTOR (Motorola)
  • BCY58 - SILICON PLANAR EPITAXIAL TRANSISTORS (Comset Semiconductor)
  • BCY58 - Bipolar NPN Device (Seme LAB)
  • BCY55 - BCY55 (ETC)
  • BCY56 - NPN SWITCHING TRANSISTOR (Seme LAB)
Other Datasheets by CDIL
  • BCY59 - NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
  • BCY70 - PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  • BCY71 - PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  • BCY72 - PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  • BCY77 - PNP SILICON PLANAR TRANSISTORS
  • BCY78 - PNP SILICON PLANAR TRANSISTORS
  • BCY79 - PNP SILICON PLANAR TRANSISTORS

Full PDF Text Transcription

Click to expand full text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY58 Collector -Emitter Voltage VCEO 32 Collector -Emitter Voltage(RBE=10 ohms) VCES 32 Emitter -Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25 degC PD Derate Above 25 deg C Power Dissipation@ Tc=25 degC PD Derate Above 25 deg C Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) Junction to Ambient Rth(j-a) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMB
Published: |