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CSP40P150 - P-Channel Trench Power MOSFET

Description

The CSP40P150 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V.

This device is suitable for use as a wide variety of applications.

Features

  • VDS = -40V,ID =-8A RDS(ON) < 21mΩ @ VGS =-10V RDS(ON) < 31mΩ @ VGS =-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number CSP40P150
Manufacturer CASS
File Size 466.27 KB
Description P-Channel Trench Power MOSFET
Datasheet download datasheet CSP40P150 Datasheet

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Full PDF Text Transcription

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P-Channel Trench Power MOSFET CSP40P150 General Description The CSP40P150 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = -40V,ID =-8A RDS(ON) < 21mΩ @ VGS =-10V RDS(ON) < 31mΩ @ VGS =-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● DC-DC converter ● Load switch ● Power management 100% UIS TESTED! Schematic Diagram Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package CSP40P150 CSP40P150 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Table 1.
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